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Same model may have multiple batches, images only for reference.
SQD23N06-31L_T4GE3
Same model may have multiple batches, images only for reference.

SQD23N06-31L_T4GE3

Part No SQD23N06-31L_T4GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD23N06-31L_T4GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 845 pF @ 25 V
Power Dissipation (Max) 37W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD23
Other Names 742-SQD23N06-31L_T4GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277814-SQD23N06-31L_T4GE3
Ultra Librarian 3D Model Ultra Librarian SQD23N06-31L_T4GE3 CAD Model

Description

The Vishay Siliconix 1047545 is an N-channel MOSFET transistor with a drain to source voltage of 60V and a continuous drain current of 23A @ 25°C.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 23A @ 25°C
  • Maximum On Resistance: 31mOhm @ 15A, 10V
  • Gate Charge: 24 nC @ 10V
  • Maximum Gate Trigger Voltage: ±20V
  • Maximum Input Capacitance: 845 pF @ 25V
  • RoHS Compliant: Yes
  • Operating Temperature Range: -55°C to 175°C

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