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Same model may have multiple batches, images only for reference.
SQD40020E_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD40020E_GE3

Part No SQD40020E_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD40020E_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD40020
Other Names SQD40020E_GE3CT,SQD40020E_GE3DKR,SQD40020E_GE3TR
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277799-SQD40020E_GE3
Ultra Librarian 3D Model Ultra Librarian SQD40020E_GE3 CAD Model

Description

The 1277799-SQD40020E_GE3 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Series: TrenchFET series
  • Supplier: Vishay Siliconix
  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 100A (Tc)
  • Maximum On-Resistance: 2.33mOhm @ 20A, 10V
  • Maximum Gate Charge: 130 nC @ 10 V
  • Input Capacitance: 8000 pF @ 25 Vds
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging: tape and reel packaging
  • Supplier Device Package: TO-252AA
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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