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SQD40N06-14L_GE3

Part No SQD40N06-14L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 40A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2105pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101725-SQD40N06-14L_GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQD40N06-14L_GE3 CAD Model

Description

The Vishay SQD40N06-14L_GE3 is an N-channel MOSFET with a maximum power dissipation of 75W.

  • Popularity: medium
  • Supply and demand status: limited
  • Win Source Part Number: 1101725
  • Case: TO-252AA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 14 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8002 $52.0130
155+ $0.6566 $101.7730
240+ $0.6361 $152.6640
325+ $0.6155 $200.0375
425+ $0.5950 $252.8750
565+ $0.5335 $301.4275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,770 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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