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Same model may have multiple batches, images only for reference.
SQD45P03-12-T4_GE3
Same model may have multiple batches, images only for reference.

SQD45P03-12-T4_GE3

Part No SQD45P03-12-T4_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD45P03-12-T4_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3495 pF @ 15 V
Power Dissipation (Max) 71W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD45
Other Names 742-SQD45P03-12-T4_GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277811-SQD45P03-12-T4_GE3
Ultra Librarian 3D Model Ultra Librarian SQD45P03-12-T4_GE3 CAD Model

Description

The SQD45P03-12-T4_GE3 is a P-Channel MOSFET transistor from Vishay Siliconix.

  • Designed for: Automotive applications
  • Qualified: AEC-Q101 and TrenchFET®
  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum On-Resistance: 10mOhm @ 15A and 10V gate-source voltage
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 83nC @ 10V
  • Package: TO-252-3, DPak
  • Operating Temperature Range: -55°C to 175°C

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