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Same model may have multiple batches, images only for reference.
SQD50N05-11L_GE3 Vishay
Same model may have multiple batches, images only for reference.

SQD50N05-11L_GE3

Part No SQD50N05-11L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 50A TO252
Datasheet
SQD50N05-11L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2106pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101731-SQD50N05-11L_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQD50N05-11L_GE3 CAD Model

Description

The Vishay MOSFET type SQD50N05-11L_GE3 is a surface mount device that is used for discrete semiconductor products.

  • Polarity: The device is an N-Channel polarity MOSFET.
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 11 mOhm @ 45A, 10V
  • Mounting: The device is mounted using SMD (SMT) technology.
  • Temperature Range: -55°C to 175°C (TJ)
  • Applications: The device is commonly used in various applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2285 $51.2555
55+ $1.8286 $100.5730
85+ $1.7714 $150.5690
117+ $1.7143 $200.5731
151+ $1.6571 $250.2221
202+ $1.4857 $300.1114
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Availability: 1,630 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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