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Same model may have multiple batches, images only for reference.
SQJ412EP-T2_GE3
Same model may have multiple batches, images only for reference.

SQJ412EP-T2_GE3

Part No SQJ412EP-T2_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJ412EP-T2_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 20 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ412
Other Names 742-SQJ412EP-T2_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277816-SQJ412EP-T2_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ412EP-T2_GE3 CAD Model

Description

The SQJ412EP-T2_GE3 is an N-Channel MOSFET transistor that belongs to the Automotive, AEC-Q101, TrenchFET series of Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 40V
  • Current: 32A (Tc) @ 25°C
  • Maximum Rds On: 4.1mOhm @ 10.3A, 10V
  • Gate Charge (Qg): 120 nC @ 10 V
  • Input Capacitance (Ciss): 5950 pF @ 20 V
  • Maximum Vgs: ±20V
  • Power Dissipation: 83W (Tc)
  • Package/Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
  • Operating Temperature Range: From -55°C to 175°C (TJ)
  • Choice for: Applications that require high performance and reliability

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