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SQJ481EP-T1_GE3

Part No SQJ481EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 80V 16A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ481
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 976147-SQJ481EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ481EP-T1_GE3 CAD Model

Description

The SQJ481EP-T1_GE3 is a P-channel MOSFET designed for surface mount applications.

  • Category: Automotive Series, Discrete Semiconductor Products
  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum On-Resistance: 80mOhm @ 10A and 10V Gate-Source Voltage
  • Gate Charge: 50nC @ 10V
  • Input Capacitance: 2000pF @ 25V Drain-Source Voltage
  • Power Dissipation: 45W
  • Operating Temperature: -55°C to 175°C
  • Package: PowerPAK SO-8
  • Packaging: Tape and Reel
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7128 $53.4600
150+ $0.6677 $100.1550
235+ $0.6452 $151.6220
335+ $0.6000 $201.0000
435+ $0.5775 $251.2125
545+ $0.5549 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,475 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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