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DMN53D0U-7

Part No DMN53D0U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 0.3A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 37.1pF @ 25V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 520mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 50mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033778-DMN53D0U-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN53D0U-7 CAD Model

Description

Introducing the DMN53D0U-7 MOSFET from Diodes Incorporated

The DMN53D0U-7 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed using advanced trench technology to provide superior performance in a variety of applications. The DMN53D0U-7 is housed in an ultra-small SOT-523 package, making it an ideal choice for space-constrained applications.

The device features a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 460mA, and a power dissipation of 300mW, which ensures efficient operation even in high power and high-temperature scenarios. With a low on-resistance of just 1.2 ohms at a gate-source voltage of 4.5V, the DMN53D0U-7 provides an excellent efficiency, thereby reducing the energy loss during operation and improving the overall performance of your electronic designs.

Moreover, the DMN53D0U-7 boasts a fast switching speed, which is crucial for high-frequency applications. Its low threshold voltage ensures that the device can be driven at lower voltages, making it compatible with today's low-voltage drive circuits and battery-operated devices. The product is also characterized by its low input capacitance, which contributes to the faster switching speeds.

Diodes Incorporated has designed the DMN53D0U-7 with reliability in mind. It features robust thermal characteristics and is rated for operation over a wide temperature range, which makes it suitable for industrial, automotive, and consumer electronics applications. Whether you are designing power management circuits, load switches, or looking to enhance the efficiency of your battery management systems, the DMN53D0U-7 is an excellent choice.

With its RoHS compliance, the DMN53D0U-7 is not only environmentally friendly but also meets the regulatory requirements for hazardous substances, ensuring a safe and sustainable solution for your electronic products.

In conclusion, the DMN53D0U-7 from Diodes Incorporated is a high-performance, energy-efficient, and reliable MOSFET that offers a compact solution for a wide range of electronic applications. Its advanced features and robust design make it an essential component for designers looking to optimize their power-sensitive designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7294 $58.6470
11+ $9.6241 $105.8651
17+ $9.3234 $158.4978
23+ $9.0226 $207.5198
29+ $8.7219 $252.9351
39+ $7.8196 $304.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,360 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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