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PSMN003-30B,118

Part No PSMN003-30B,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK / Trans MOSFET N-CH 30V 75A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Series TrenchMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9200pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 230W (Tc)
Rds On (Maximum) @ Id, Vgs 2.8 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 792610-PSMN003-30B,118
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN003-30B
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PSMN003-30B,118 CAD Model

Description

Introducing the PSMN003-30B,118 MOSFET by NXP Semiconductors

The PSMN003-30B,118 is a high-performance N-channel MOSFET brought to you by NXP Semiconductors, a name synonymous with quality and innovation in the electronics sector. This power MOSFET is designed to deliver optimal efficiency and reliability for a wide range of applications, including but not limited to, power management, switching regulators, and motor control.

Key Features

      
  • Low On-Resistance: The PSMN003-30B,118 boasts an exceptionally low on-resistance (RDS(on)) which translates to reduced conduction losses and improved power efficiency in applications.
  •   
  • High Current Capability: With a continuous drain current (ID) rating of up to 30A, this MOSFET can handle high current loads, making it ideal for demanding power applications.
  •   
  • High-Speed Switching: The device is designed for fast switching performance, crucial for applications requiring high-speed operation like switching regulators.
  •   
  • Robust Thermal Performance: The PSMN003-30B,118 is encapsulated in a TO-220 package, known for its excellent thermal dissipation properties, ensuring the MOSFET operates within safe temperature ranges under high load conditions.
  •   
  • Voltage Rating: It has a drain-source voltage (VDS) rating of 30V, which makes it suitable for low to medium voltage applications.

Applications

The versatility of the PSMN003-30B,118 allows it to be used in a variety of circuits and end-products. It is particularly well-suited for:

      
  • DC-DC Converters
  •   
  • Power Supplies
  •   
  • Motor Drives
  •   
  • Automotive Applications
  •   
  • Power Management Functions

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN003-30B,118 MOSFET is no exception, undergoing rigorous testing and quality control measures to ensure it performs to specifications in the most challenging environments.

Whether you are designing a new power system or looking to upgrade an existing one, the PSMN003-30B,118 by NXP Semiconductors is a solid choice that offers performance, efficiency, and reliability.

For detailed specifications, application notes, and additional resources, please refer to the official NXP Semiconductors product datasheet for the PSMN003-30B,118 MOSFET.

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