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SQJ504EP-T1_GE3

Part No SQJ504EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V, 4600pF @ 25V
Power - Max 34W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJ504
Other Names SQJ504EP-T1_GE3DKR,SQJ504EP-T1_GE3TR,SQJ504EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278525-SQJ504EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ504EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJ504EP-T1_GE3 is a MOSFET transistor that is ideal for use in various applications.

  • Series: Automotive, AEC-Q101, TrenchFET® series
  • Drain to Source Voltage: 40V
  • Current Continuous Drain: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
  • Package: PowerPAK® SO-8 Dual
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7143 $51.4290
75+ $1.4066 $105.4950
115+ $1.3627 $156.7105
155+ $1.3187 $204.3985
200+ $1.2748 $254.9600
265+ $1.1429 $302.8685
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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