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SQJ858AEP-T1_GE3

Part No SQJ858AEP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 58A / Trans MOSFET N-CH 40V 58A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2450pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 48W (Tc)
Rds On (Maximum) @ Id, Vgs 6.3 mOhm @ 14A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 792807-SQJ858AEP-T1_GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SQJ858AEP
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SQJ858AEP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJ858AEP-T1_GE3 is a MOSFET that belongs to the Automotive, AEC-Q101, TrenchFET series.

  • Package: PowerPAK SO-8
  • Mounting Type: SMD
  • Drain-Source Voltage: 40V
  • Continuous Drain Current: 58A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 48W @ Tc
  • Gate Charge at Maximum Vgs: 55nC
  • Input Capacitance: 2450pF @ 20Vds
  • Drive Voltage: 4.5V and 10V for max Rds On and min Rds On

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3853 $50.0890
320+ $0.3162 $101.1840
490+ $0.3063 $150.0870
675+ $0.2964 $200.0700
875+ $0.2865 $250.6875
1,170+ $0.2569 $300.5730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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