The SQJA20EP-T1_GE3 is an N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

• Applications: Discrete Semiconductor Products such as Transistors - FETs, MOSFETs - Single
• Package: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250μA
• Power Dissipation (Max): 68W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 175°C (TJ)