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SQJA90EP-T1_GE3

Part No SQJA90EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA90
Other Names SQJA90EP-T1_GE3CT,SQJA90EP-T1_GE3DKR,SQJA90EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277844-SQJA90EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA90EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJA90EP-T1_GE3 TrenchFET is a discrete semiconductor product that features an 80V Drain to Source Voltage (Vdss) in a PowerPAK® SO-8 package.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Package/Case Type: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
  • Temperature Range: -55°C ~ 175°C (TJ)
  • HTSUS Code: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1927 $53.6715
105+ $0.9786 $102.7530
160+ $0.9480 $151.6800
220+ $0.9174 $201.8280
285+ $0.8869 $252.7665
380+ $0.7951 $302.1380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,710 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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