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SQJA96EP-T1_GE3

Part No SQJA96EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A PPAK SO-8 / N-Channel 80 V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package PowerPAK® SO-8
Case / Package PowerPAK® SO-8
Base Product Number SQJA96
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SQJA96EP-T1_GE3CT,SQJA96EP-T1_GE3TR,SQJA96EP-T1_GE3DKR
Standard Package 3,000
Win Source Part Number 1324703-SQJA96EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA96EP-T1_GE3 CAD Model

Description

Vishay Siliconix's SQJA96EP-T1_GE3 is a surface mount MOSFET transistor that has an N-channel FET type.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 30A @ 25°C
  • Maximum Rds On: 21.5mOhm @ 10A and 10V
  • Gate Charge: 25nC @ 10V
  • Input Capacitance: 1200pF @ 25Vds
  • Operating Temperature: -55°C to 175°C
  • Ideal for: applications that require high reliability and stability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7008 $59.5680
205+ $0.5751 $117.8955
315+ $0.5571 $175.4865
430+ $0.5391 $231.8130
555+ $0.5211 $289.2105
745+ $0.4672 $348.0640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,485 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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