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SQJB68EP-T1_GE3

Part No SQJB68EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Rds On (Max) @ Id, Vgs 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Power - Max 27W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJB68
Other Names SQJB68EP-T1_GE3CT,SQJB68EP-T1_GE3TR,SQJB68EP-T1_GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278521-SQJB68EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJB68EP-T1_GE3 CAD Model

Description

The Vishay Siliconix transistor is a dual N-channel FET type with a standard feature and a drain to source voltage of 100V.

  • Continuous Drain Current: 11A @ 25°C
  • Rds On: 92mOhm @ 4A and 10V
  • Gate Charge (Qg): 8nC @ 10V
  • Input Capacitance (Ciss): 280pF @ 25V
  • Package: PowerPAK SO-8 Dual package
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • MSL Level: 1 (unlimited)
  • Series: Vishay TrenchFET series
  • Application: Suitable for automotive use

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6511 $58.5990
220+ $0.5343 $117.5460
335+ $0.5176 $173.3960
465+ $0.5010 $232.9650
600+ $0.4842 $290.5200
800+ $0.4340 $347.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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