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SQJB80EP-T1_GE3

Part No SQJB80EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2 N-CH 80V POWERPAK SO8 / Mosfet Array 2 N-Channel (Dual) 80V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Power - Max 48W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Case / Package PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJB80
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SQJB80EP-T1_GE3TR,SQJB80EP-T1_GE3CT,SQJB80EP-T1_GE3DKR
Standard Package 3,000
Win Source Part Number 1324146-SQJB80EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJB80EP-T1_GE3 CAD Model

Description

The SQJB80EP-T1_GE3 is a 2 N-Channel (Dual) MOSFET transistor array from Vishay Siliconix.

  • Manufacturer: Vishay Siliconix
  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 30A (Tc) @ 25°C
  • FET Type: standard
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Power - Max: 48W
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: PowerPAK® SO-8 Dual

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8696 $60.8720
165+ $0.7136 $117.7440
255+ $0.6913 $176.2815
350+ $0.6690 $234.1500
450+ $0.6467 $291.0150
600+ $0.5798 $347.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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