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Same model may have multiple batches, images only for reference.
SQJQ100E-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJQ100E-T1_GE3

Part No SQJQ100E-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJQ100E-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14780 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case PowerPAK® 8 x 8
Base Product Number SQJQ100
Other Names SQJQ100E-T1_GE3TR,SQJQ100E-T1_GE3DKR,SQJQ100E-T1_GE3CT
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277847-SQJQ100E-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ100E-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJQ100E-T1_GE3 is a MOSFET transistor that is ideal for use in various electronic applications.

  • Drain to Source Voltage: 40 V
  • Current: 200A @ 25°C
  • Package: PowerPAK® 8 x 8
  • Gate Charge: 165 nC @ 10 V
  • RoHS Compliant: Yes
  • Standard Package: 2,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.4627 $52.3881
7+ $14.3284 $100.2988
11+ $13.8806 $152.6866
15+ $13.4329 $201.4935
20+ $12.9851 $259.7020
26+ $11.6418 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,734 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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