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SQJQ906E-T1_GE3

Part No SQJQ906E-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Rds On (Max) @ Id, Vgs 3.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 20V
Power - Max 50W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® 8 x 8 Dual
Supplier Device Package PowerPAK® 8 x 8 Dual
Base Product Number SQJQ906
Other Names SQJQ906E-T1_GE3DKR,SQJQ906E-T1_GE3,SQJQ906E-T1_GE3TR,SQJQ906E-T1_GE3CT
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278531-SQJQ906E-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ906E-T1_GE3 CAD Model

Description

The SQJQ906E-T1_GE3 is a dual N-Channel MOSFET array designed for use in automotive applications. It is manufactured by Vishay Siliconix and has a Win Source Part Number of 1278531.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 95A @ 25°C
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
  • Gate Charge (Qg): 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3029 $51.6348
29+ $3.5306 $102.3874
44+ $3.4202 $150.4888
61+ $3.3099 $201.9039
79+ $3.1996 $252.7684
105+ $2.8686 $301.2030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,565 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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