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Same model may have multiple batches, images only for reference.
SQM10250E_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM10250E_GE3

Part No SQM10250E_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 65A TO263 / N-Channel 250 V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet
SQM10250E_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4050 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM10250
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQM10250E_GE3TR,SQM10250E_GE3CT,SQM10250E_GE3DKR
Standard Package 800
Win Source Part Number 967553-SQM10250E_GE3
Ultra Librarian 3D Model Ultra Librarian SQM10250E_GE3 CAD Model

Description

The Vishay Siliconix SQM10250E_GE3 is an N-channel MOSFET transistor designed for use in power management applications.

  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: Surface Mount
  • Drain to Source Voltage (Vdss): 250V
  • Power Dissipation: 375W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • RoHS Compliant: Yes
  • Manufacturer: Vishay Siliconix

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42+ $2.4311 $102.1062
64+ $2.3552 $150.7328
88+ $2.2792 $200.5696
114+ $2.2032 $251.1648
152+ $1.9753 $300.2456
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