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Same model may have multiple batches, images only for reference.
SQM110P04-04L-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM110P04-04L-GE3

Part No SQM110P04-04L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 120A TO263
Datasheet
SQM110P04-04L-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 330nC @ 10V
Max Input Capacitance 13980pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101744-SQM110P04-04L-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQM110P04-04L-GE3 CAD Model

Description

The Vishay MOSFET is a P-Channel power MOSFET with a maximum power dissipation of 375W (Tc).

  • Channel Type: P-Channel
  • Maximum Power Dissipation: 375W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 330nC @ 10V
  • Maximum Rds On @ Id,Vgs: 4 mOhm @ 30A, 10V
  • Maximum Input Capacitance: 13980pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: TO-263 (D2Pak)
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand Status: Balanced

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