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SQM47N10-24L_GE3

Part No SQM47N10-24L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 47A TO263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101748-SQM47N10-24L_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQM47N10-24L_GE3 CAD Model

Description

The SQM47N10-24L_GE3 is an N-Channel MOSFET manufactured by Vishay.

  • Channel Type: N-Channel
  • Popularity: Medium
  • Category: Discrete Semiconductor Products
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 47A @ 25°C
  • Maximum Rds On @ Id,Vgs: 24 mOhm @ 40A and 10V

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