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SQS401ENW-T1_GE3

Part No SQS401ENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.2 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1875 pF @ 20 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SQS401
Other Names SQS401ENW-T1_GE3DKR,SQS401ENW-T1_GE3TR,SQS401ENW-T1_GE3CT,SQS401ENW-T1_GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277821-SQS401ENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQS401ENW-T1_GE3 CAD Model

Description

This electronic component is a P-Channel MOSFET transistor manufactured by Vishay Siliconix.

  • Win Source Part Number: 1277821-SQS401ENW-T1_GE3
  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 16A @ 25°C
  • Package/Case: PowerPAK® 1212-8
  • Supplier Device Package: PowerPAK® 1212-8
  • Gate Charge at Maximum Voltage: 21.2 nC @ 4.5V
  • Maximum Power Dissipation: 62.5W @ Tc

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6553 $57.9355
90+ $1.3583 $122.2470
135+ $1.3159 $177.6465
185+ $1.2734 $235.5790
235+ $1.2310 $289.2850
315+ $1.1036 $347.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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