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SQS840CENW-T1_GE3

Part No SQS840CENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1031 pF @ 20 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8W
Package / Case PowerPAK® 1212-8W
Base Product Number SQS840
Other Names 742-SQS840CENW-T1_GE3CT,742-SQS840CENW-T1_GE3TR,742-SQS840CENW-T1_GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277855-SQS840CENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQS840CENW-T1_GE3 CAD Model

Description

The Vishay SQS840CENW-T1_GE3 is an N-channel MOSFET transistor designed for discrete semiconductor products.

  • Series: Automotive, AEC-Q101, TrenchFET
  • Maximum Power Dissipation: 33W (Tc)
  • Mounting: Surface mount device (SMD)
  • Maximum Drain to Source Voltage: 40V
  • Rds On (Max): 20mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
  • Temperature Range: -55°C and 175°C (TJ)
  • Package: PowerPAK® 1212-8W
  • Gate Voltage (Vgs): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8687 $60.8090
165+ $0.7129 $117.6285
255+ $0.6906 $176.1030
350+ $0.6683 $233.9050
450+ $0.6460 $290.7000
600+ $0.5791 $347.4600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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