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SPP100N04S2L-03

Part No SPP100N04S2L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP100N
Other Names SP000013719,SPP100N04S2L03
Standard Package 500
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278275-SPP100N04S2L-03
Ultra Librarian 3D Model Ultra Librarian SPP100N04S2L-03 CAD Model

Description

The Infineon Technologies 1278275-SPP100N04S2L-03 is an OptiMOS™ N-Channel MOSFET transistor, designed for high power applications.

  • Drain-Source Voltage: 40V
  • Maximum Continuous Drain Current: 100A
  • Rds(on): 3.3mOhm @ 80A and 10V
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 175°C

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