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Same model may have multiple batches, images only for reference.
SQS840EN-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQS840EN-T1_GE3

Part No SQS840EN-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 16A TO263
Datasheet
SQS840EN-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 22.5nC @ 10V
Max Input Capacitance 1031pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1101754-SQS840EN-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQS840EN-T1_GE3 CAD Model

Description

The Vishay SQS840EN-T1_GE3 is an N-channel MOSFET designed for discrete semiconductor products.

  • Manufacturer: Vishay
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 12A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge @ 10V: 22.5nC
  • Package: PowerPAK 1212-8
  • Power Dissipation (Tc): 33W
  • Maximum Rds On @ 7.5A, 10V: 20 mOhm

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6403 $51.2240
195+ $0.5254 $102.4530
295+ $0.5089 $150.1255
410+ $0.4925 $201.9250
530+ $0.4761 $252.3330
705+ $0.4269 $300.9645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,800 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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