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Same model may have multiple batches, images only for reference.
SQV120N06-4M7L_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQV120N06-4M7L_GE3

Part No SQV120N06-4M7L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQV120N06-4M7L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SQV120
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277810-SQV120N06-4M7L_GE3
Ultra Librarian 3D Model Ultra Librarian SQV120N06-4M7L_GE3 CAD Model

Description

The SQV120N06-4M7L_GE3 is an N-Channel MOSFET transistor manufactured by Vishay Siliconix.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum Rds On: 4.7mOhm @ 30A, 10V
  • Gate Charge: 230nC @ 10V
  • Input Capacitance: 8800pF @ 25Vds
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Suitable for: Various electronic applications such as power amplification and switching
  • RoHS Compliant: Yes
  • ECCN: EAR99
  • Available on Win Source Part Number: 1277810-SQV120N06-4M7L_GE3

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