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SUB75P03-08-E3

Part No SUB75P03-08-E3
Manufacturer Vishay
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 08+Rohs
Reference case TO-263
Manufacturer Vishay
Manufacturer Homepage www.vishay.com
Win Source Part Number 756976-SUB75P03-08-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUB75P03-08-E3 CAD Model

Description

The SUB75P03-08-E3 is a P-Channel Power MOSFET manufactured by Vishay. It's designed for power management applications where efficiency and low on-resistance are critical. This MOSFET is commonly used in DC-DC converters, load switches, and battery management systems.

Applications:

  • DC-DC Converters: Used as a switching element in buck and boost converters.
  • Load Switches: Employed for efficient power distribution control.
  • Battery Management Systems: Used for charge and discharge control.
  • Power Management: Integrated in various power management circuits.
  • Motor Control: Can be used for controlling low-power DC motors.

Features:

  • P-Channel MOSFET: Facilitates ease of use in diverse circuit configurations.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses for enhanced efficiency.
  • Fast Switching Speed: Enables efficient high-frequency operation.
  • TrenchFET® Power MOSFET: Advanced trench technology optimizes performance.
  • Lead (Pb)-free and Halogen-free: Compliant with environmental regulations.

Benefits:

  • Improved Efficiency: Low RDS(on) significantly reduces conduction losses.
  • Reduced Heat Dissipation: Minimizes heat generation, improving thermal management.
  • Fast Switching: Enables efficient power conversion in high-frequency applications.
  • Environmentally Friendly: Lead-free and halogen-free construction supports green initiatives.
  • Reliable Performance: Vishay's reputation ensures long-term reliability and stability.

Additional Details:

The SUB75P03-08-E3 typically has a drain-source voltage (VDS) rating of -30V. It boasts an ultra-low on-resistance (RDS(on)), which reduces power loss during conduction. The gate-source voltage (VGS) threshold is specified to ensure proper turn-on and turn-off characteristics. It features a continuous drain current (ID) rating indicating the maximum current it can handle under normal operating conditions. The operating temperature range extends from -55°C to +175°C, ensuring robust performance in harsh environments. The device is available in a surface-mount package, facilitating automated assembly and reducing manufacturing costs. Vishay’s advanced TrenchFET® technology optimizes the MOSFET's performance, leading to increased efficiency and reduced heat generation. The low gate charge contributes to fast switching speeds, making it ideal for high-frequency applications.

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