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SUB85N03-04P

Part No SUB85N03-04P
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194897-SUB85N03-04P
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUB85N03-04P CAD Model

Description

The SUB85N03-04P is an N-Channel power MOSFET manufactured by Vishay. It's designed for efficient power switching and management in various applications. Leveraging advanced trench technology, this MOSFET achieves a low on-resistance and gate charge, thereby minimizing power losses and enhancing overall system performance. Its robust design ensures reliable operation in demanding environments.

Applications:

  • DC-DC Converters
  • Motor Control
  • Load Switching
  • Power Supplies

Features:

  • Low On-Resistance: Minimizes conduction losses for increased efficiency.
  • Low Gate Charge: Reduces switching losses and improves high-frequency performance.
  • Trench Technology: Delivers superior switching characteristics.
  • Standard Level Gate Drive: Simplifies interfacing with control circuits.
  • RoHS Compliant: Meets environmental standards.

Benefits:

  • Improved Efficiency: Lower on-resistance and gate charge result in more efficient power conversion.
  • Reduced Heat Generation: Minimizes power dissipation, enhancing system reliability and longevity.
  • Simplified Circuit Design: Standard level gate drive makes integration easier.
  • Enhanced Thermal Performance: Efficient heat dissipation enables higher power density.
  • Reliable Operation: Robust design ensures stable performance in harsh environments.

Additional Details:

The SUB85N03-04P operates with a voltage rating of 30V and a continuous drain current of up to 85A. This high current capability makes it ideal for a range of power applications. The low on-resistance minimizes power loss during conduction, improving energy efficiency. The surface-mount package allows for automated assembly. The SUB85N03-04P also features robust gate oxide protection and avalanche ruggedness, enhancing its reliability and preventing device failure. The thermal resistance has been optimized to promote efficient heat dissipation, enabling the MOSFET to operate at higher power levels without compromising performance or longevity. This MOSFET is also suitable for synchronous rectification.

The SUB85N03-04P is designed to provide excellent switching performance while minimizing power losses. The advanced trench technology reduces the gate charge and on-resistance of the MOSFET, which improves its efficiency and reduces heat generation. This makes it suitable for a wide range of applications, including DC-DC converters, motor control, and load switching.

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