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Same model may have multiple batches, images only for reference.
SI4845DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4845DY-T1-E3

Part No SI4845DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A 8-SOIC
Datasheet
SI4845DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Max Input Capacitance 312pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.75W (Ta), 2.75W (Tc)
Maximum Rds On at Id,Vgs 210 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 098376-SI4845DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4845DY-T1-E3 CAD Model

Description

The Vishay 098376-SI4845DY-T1-E3 is a P-channel MOSFET with a Schottky diode feature that is isolated.

  • Maximum Power Dissipation: 1.75W (Ta) and 2.75W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.7A (Tc)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 4.5nC @ 4.5V
  • Maximum Input Capacitance: 312pF @ 10V
  • Maximum Rds On @ Id,Vgs: 210 mOhm @ 2A, 4.5V
  • Category: Discrete Semiconductor Products
  • Mounting: 8-SO package
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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345+ $0.3375 $116.4375
535+ $0.3269 $174.8915
735+ $0.3164 $232.5540
945+ $0.3058 $288.9810
1,265+ $0.2742 $346.8630
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Availability: 25,000 pieces
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