The SUD19P06-60-BE3 is a P-Channel MOSFET transistor from the TrenchFET series of discrete semiconductor products.

• Drain to Source Voltage: 60V
• Power Dissipation: 2.3W (Ta), 38.5W (Tc)
• Package: Tape and Reel
• Standard Package: 2,000
• Technology: MOSFET (Metal Oxide)
• FET Type: P-Channel
• Vgs (Max): ±20V
• Temperature Range: -55°C to 150°C (TJ)
• Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
• Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25V