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Same model may have multiple batches, images only for reference.
FQB10N20TM Real Image
Same model may have multiple batches, images only for reference.

FQB10N20TM

Part No FQB10N20TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 10A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Maximum Rds On at Id,Vgs 360 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 067378-FQB10N20TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB10N20TM CAD Model

Description

The Fairchild/ON Semiconductor FQB10N20TM is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 10A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 670pF @ 25V
  • Maximum Rds On: 360 mOhm @ 5A, 10V
  • Package: D2PAK (TO-263AB)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2688 $63.4400
115+ $1.0411 $119.7265
175+ $1.0085 $176.4875
240+ $0.9760 $234.2400
310+ $0.9436 $292.5160
410+ $0.8459 $346.8190
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Availability: 1,600 pieces
MOQ: 50 pcs
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