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Same model may have multiple batches, images only for reference.
SUD23N06-31L-T4-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD23N06-31L-T4-E3

Part No SUD23N06-31L-T4-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO252
Datasheet
SUD23N06-31L-T4-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104086-SUD23N06-31L-T4-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD23N06-31L-T4-E3 CAD Model

Description

The Vishay SUD23N06-31L-T4-E3 MOSFET is a high-performance N-channel device designed for use in a wide range of electronic applications.

  • Channel Type: N-Channel
  • Power Dissipation: 3 W (Ta) and 100 W (Tc)
  • Package: TO-252 (D-Pak)
  • Mounting: Surface Mount Technology
  • Drain-Source Breakdown Voltage: 60 V
  • Rds On at Id,Vgs: 31 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250µA
  • Gate Charge: 17nC @ 10V
  • Supply and Demand Status: Balanced

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