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Same model may have multiple batches, images only for reference.
SUD25N04-25-T4-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD25N04-25-T4-E3

Part No SUD25N04-25-T4-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 25A TO252
Datasheet
SUD25N04-25-T4-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104089-SUD25N04-25-T4-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD25N04-25-T4-E3 CAD Model

Description

The Vishay 1104089-SUD25N04-25-T4-E3 is an N-channel MOSFET that has a power dissipation of 3W (Ta), 33W (Tc).

  • Mounting: SMD (SMT)
  • Package: TO-252, (D-Pak)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current at 25°C: 25A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 510pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 25 mOhm @ 25A, 10V
  • Category: Discrete Semiconductor Products
  • Product Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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