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Same model may have multiple batches, images only for reference.
SUD25N15-52-T4-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD25N15-52-T4-E3

Part No SUD25N15-52-T4-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUD25N15-52-T4-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1725 pF @ 25 V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SUD25
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277538-SUD25N15-52-T4-E3
Ultra Librarian 3D Model Ultra Librarian SUD25N15-52-T4-E3 CAD Model

Description

The SUD25N15-52-T4-E3 is a MOSFET transistor from Vishay Siliconix's TrenchFET® series.

  • Channel Type: N-channel FET
  • Drain-to-Source Voltage: 150V
  • Continuous Drain Current: 25A @ 25°C
  • Maximum On-Resistance: 52mOhm @ 5A and 10V
  • Gate-Source Voltage Threshold: 4V @ 250µA
  • Power Dissipation: 3W @ Ta and 136W @ Tc
  • Mounting: SMD technology
  • Package/Case: TO-252-3, DPak package/case with 2 leads and a tab
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 40nC @ 10V
  • Input Capacitance: 1725pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99

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