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SUD35N10-26P-E3 Real Image SUD35N10-26P-E3 Real Image1 SUD35N10-26P-E3 Real Image2 SUD35N10-26P-E3 Real Image3 SUD35N10-26P-E3 Real Image4 SUD35N10-26P-E3 Real Image5 SUD35N10-26P-E3 Real Image6 SUD35N10-26P-E3 Real Image7 SUD35N10-26P-E3 Real Image8 SUD35N10-26P-E3 Real Image9
Same model may have multiple batches, images only for reference.
SUD35N10-26P-E3 Real Image SUD35N10-26P-E3 Real Image1 SUD35N10-26P-E3 Real Image2 SUD35N10-26P-E3 Real Image3 SUD35N10-26P-E3 Real Image4 SUD35N10-26P-E3 Real Image5 SUD35N10-26P-E3 Real Image6 SUD35N10-26P-E3 Real Image7 SUD35N10-26P-E3 Real Image8 SUD35N10-26P-E3 Real Image9
SUD35N10-26P-E3 Real Image SUD35N10-26P-E3 Real Image1 SUD35N10-26P-E3 Real Image2 SUD35N10-26P-E3 Real Image3 SUD35N10-26P-E3 Real Image4 SUD35N10-26P-E3 Real Image5 SUD35N10-26P-E3 Real Image6 SUD35N10-26P-E3 Real Image7 SUD35N10-26P-E3 Real Image8 SUD35N10-26P-E3 Real Image9
Same model may have multiple batches, images only for reference.

SUD35N10-26P-E3

Part No SUD35N10-26P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO252
Datasheet
SUD35N10-26P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Gate-Source Threshold Voltage 4.4V @ 250μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 2000pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 056997-SUD35N10-26P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD35N10-26P-E3 CAD Model

Description

The Vishay 056997-SUD35N10-26P-E3 is an N-channel MOSFET that has a drain-source breakdown voltage of 100V and a continuous drain current of 35A (Tc).

  • Manufacturer: Vishay
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 35A (Tc)
  • Gate-Source Threshold Voltage: 4.4V @ 250μA
  • Maximum Gate Charge: 47nC @ 10V
  • Maximum Rds On: 26 mOhm @ 12A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Mounting Technology: SMD (SMT)
  • Packaging: Reel
  • Case/Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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205+ $1.1461 $234.9505
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350+ $0.9933 $347.6550
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