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Same model may have multiple batches, images only for reference.
SUD50N03-16P-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUD50N03-16P-GE3

Part No SUD50N03-16P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO252
Datasheet
SUD50N03-16P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.5W (Ta), 40.8W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104099-SUD50N03-16P-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD50N03-16P-GE3 CAD Model

Description

The Vishay SUD50N03-16P-GE3 is an N-Channel MOSFET transistor that comes in a TO-252, (D-Pak) package.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 15A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 13nC @ 4.5V
  • Maximum Input Capacitance: 1150pF @ 25V
  • Status: Obsolete (EOL)
  • Power Dissipation (max): 6.5W (Ta), 40.8W (Tc)
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
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205+ $0.5652 $115.8660
320+ $0.5475 $175.2000
440+ $0.5298 $233.1120
565+ $0.5123 $289.4495
755+ $0.4592 $346.6960
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Availability: 10,000 pieces
MOQ: 85 pcs
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