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SUD50N04-09H-E3

Part No SUD50N04-09H-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A TO252 / Trans MOSFET N-CH 40V 115A 3-Pin(2+Tab) DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 85nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3700pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 83.3W (Tc)
Rds On (Maximum) @ Id, Vgs 9 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-252, (D-Pak)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 795837-SUD50N04-09H-E3
Popularity Medium
Supply and Demand Status Balance
Family Name SUD50N04-09H
Introduction Date March 09, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SUD50N04-09H-E3 CAD Model

Description

The Vishay Siliconix SUD50N04-09H-E3 is a MOSFET transistor from the TrenchFET series.

  • Maximum Drain-Source Voltage: 40V
  • Continuous Drain Current: 50A @ 25°C
  • On-Resistance: 9 mOhm @ 20A, 10V
  • Input Capacitance: 3700pF @ 25V
  • Gate Charge: 85nC @ 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: Surface Mount
  • Operating Temperature: -55°C to 175°C
  • Maximum Power Dissipation: 83.3W @ 25°C

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