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SUD50N04-8M8P-4GE3

Part No SUD50N04-8M8P-4GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 14A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 2400pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 48.1W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031614-SUD50N04-8M8P-4GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50N04-8M8P-4GE3 CAD Model

Description

The Vishay SUD50N04-8M8P-4GE3 is an N-channel MOSFET designed for discrete semiconductor applications.

  • Package: TO-252 (D-Pak)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 14A (Ta) and 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 56nC @ 10V
  • Maximum Rds On: 8.8 mOhm @ 20A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5042 $52.6470
85+ $1.2342 $104.9070
130+ $1.1956 $155.4280
175+ $1.1571 $202.4925
225+ $1.1185 $251.6625
300+ $1.0028 $300.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,448 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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