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SUD50N06-07L-E3

Part No SUD50N06-07L-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 96A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 144nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 7.4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104103-SUD50N06-07L-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SUD50N06-07L-E3 CAD Model

Description

The Vishay SUD50N06-07L-E3 is an N-channel MOSFET that is designed for use in various applications, including power management and industrial.

  • Power Dissipation: 136W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (25°C): 96A
  • Package: Reel - TR
  • Mounting Type: SMD (SMT)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 3V @ 250μA

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