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Same model may have multiple batches, images only for reference.
SUM110N04-2M1P-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM110N04-2M1P-E3

Part No SUM110N04-2M1P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 29A D2PAK
Datasheet
SUM110N04-2M1P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 29A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 360nC @ 10V
Max Input Capacitance 18800pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.13W (Ta), 312W (Tc)
Maximum Rds On at Id,Vgs 2.1 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 057010-SUM110N04-2M1P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUM110N04-2M1P-E3 CAD Model

Description

The Vishay 057010-SUM110N04-2M1P-E3 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.13W (Ta), 312W (Tc)
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 2.1 mOhm @ 30A, 10V
  • Package: TO-263 (D2Pak) package
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 29A (Ta), 110A (Tc)

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Quantity Unit Price Ext. Price
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22+ $4.7059 $103.5298
33+ $4.5588 $150.4404
46+ $4.4117 $202.9382
59+ $4.2647 $251.6173
79+ $3.8235 $302.0565
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MOQ: 9 pcs
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