The SUM110N04-2M3L-E3 is an N-Channel power MOSFET from Vishay, designed for efficient power management in various applications. This device features a low on-resistance and gate charge, minimizing power losses during switching operations. It is also RoHS compliant and halogen-free, contributing to environmentally conscious designs.

Applications

• Synchronous Rectification: Enhances efficiency in DC-DC converters.
• DC-DC Converters: Suitable for various DC-DC conversion topologies.
• Power Tools: Provides efficient power switching for cordless power tools.
• Battery Management Systems (BMS): Used in battery protection and charge/discharge control.

Features

• N-Channel MOSFET: Facilitates efficient and rapid switching.
• Low On-Resistance (RDS(on)): Reduces conduction losses, improving efficiency. Typically, RDS(on) = 2.3 mΩ at VGS = 10V.
• Low Gate Charge (Qg): Minimizes switching losses and enhances overall system efficiency.
• Avalanche Rated: Offers robustness against voltage transients.
• RoHS Compliant: Adheres to environmental regulations regarding hazardous materials.
• Halogen-Free: Supports environmentally friendly designs.

Benefits

• Increased Efficiency: Reduced power losses due to low on-resistance and gate charge.
• Improved Thermal Management: Allows for higher power density.
• Robust Operation: Avalanche rating ensures reliability under voltage stress.
• Environmentally Sound: RoHS compliance and halogen-free construction.
• Simplified Circuit Design: Fast switching characteristics streamline design processes.

Technical Specifications

The SUM110N04-2M3L-E3 has a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 110A (dependent on case temperature). The gate-source voltage (VGS) is rated at ±20V. It's packaged in a PowerPAK® SO-8, optimized for thermal performance. The operating junction temperature ranges from -55°C to +175°C. The typical input capacitance is around 5000 pF, and the rise time is approximately 12 ns. The total gate charge is around 60 nC. This MOSFET design prioritizes minimizing conduction and switching losses. The thermal resistance, junction-to-case, is typically around 0.8 °C/W, permitting effective heat dissipation with proper heatsinking.