The SUM110N05-06L-E3 is an N-Channel power MOSFET from Vishay, meticulously designed for high-efficiency switching applications. It boasts a remarkably low on-resistance and gate charge, leading to minimized power dissipation and enhanced system performance. This MOSFET is compliant with RoHS standards and is halogen-free, aligning with contemporary environmental considerations.

Applications

• Synchronous Rectification: Optimizes efficiency in DC-DC converters.
• Power Supplies: Well-suited for use in power supplies for servers, telecom equipment, and industrial systems.
• Motor Control: Can be implemented in diverse motor control circuits.
• Load Switching: Designed for applications necessitating efficient and dependable load switching.

Features

• N-Channel MOSFET: Provides efficient and rapid switching capabilities.
• Low On-Resistance (RDS(on)): Minimizes conduction losses, thereby enhancing efficiency. Specifically, RDS(on) = 0.6 mΩ (typical) at VGS = 10V.
• Low Gate Charge (Qg): Reduces switching losses and contributes to improved overall efficiency.
• Avalanche Rated: Offers robust protection against voltage spikes.
• RoHS Compliant: Adheres to environmental regulations concerning hazardous substances.
• Halogen-Free: Further promotes environmental friendliness.

Benefits

• Exceptional Efficiency: Reduced power losses attributed to low on-resistance and gate charge.
• Superior Thermal Performance: Facilitates higher power density in various applications.
• Reliable Operation: Avalanche rating guarantees robustness against voltage transients.
• Environmentally Conscious: RoHS compliance and halogen-free construction.
• Simplified Design: Fast switching characteristics streamline circuit design.

Technical Specifications

The SUM110N05-06L-E3 features a drain-source voltage (VDS) of 50V and a continuous drain current (ID) of up to 110A (dependent on case temperature). Its gate-source voltage (VGS) is rated at ±20V. The device is available in a PowerPAK® SO-8 package, which ensures effective heat dissipation. The operating junction temperature extends from -55°C to +175°C. The typical input capacitance is approximately 7000 pF, and the rise time is roughly 10 ns. The total gate charge is around 70 nC. This MOSFET is optimized for minimizing both switching losses and on-state resistance. The thermal resistance, junction-to-case, is typically around 0.5 °C/W, which allows for efficient heat transfer from the die to the surrounding environment when properly heatsinked.