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SUM110P08-11L-E3

Part No SUM110P08-11L-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 80V 110A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 10850pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 13.6W (Ta), 375W (Tc)
Maximum Rds On at Id,Vgs 11.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1104114-SUM110P08-11L-E3
Family Name SUM110P08-11L
Introduction Date December 02, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian SUM110P08-11L-E3 CAD Model

Description

The Vishay SUM110P08-11L-E3 MOSFET is a P-Channel power MOSFET that can handle a maximum power dissipation of 13.6W (Ta), 375W (Tc).

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 110A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 270nC @ 10V
  • Maximum Input Capacitance: 10850pF @ 40V
  • Maximum Rds On at Id,Vgs: 11.2 mOhm @ 20A, 10V
  • Application: Industrial
  • Popularity: High
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.3015 $52.8240
33+ $3.0926 $102.0558
51+ $2.9881 $152.3931
72+ $2.7792 $200.1024
94+ $2.6747 $251.4218
117+ $2.5702 $300.7134
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,335 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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