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SUM33N20-60P-E3

Part No SUM33N20-60P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 33A D2PAK / Trans MOSFET N-CH 200V 33A 3-Pin(2+Tab) D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 113nC @ 15V
Input Capacitance (Ciss) (Maximum) @ Vds 2735pF @ 25V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 3.12W (Ta), 156W (Tc)
Rds On (Maximum) @ Id, Vgs 59 mOhm @ 20A, 15V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (D2Pak)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 795838-SUM33N20-60P-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SUM33N20-60P
Introduction Date November 15, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SUM33N20-60P-E3 CAD Model

Description

The SUM33N20-60P-E3 MOSFET is a high-performance semiconductor device designed for use in a variety of applications.

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 3.12W (Ta), 156W (Tc)
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Gate Charge: 113nC @ 15V
  • Input Capacitance: 2735pF @ 25V
  • Drain-Source Voltage: 200V
  • Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
  • Rds On (Maximum) @ Id, Vgs: 59 mOhm @ 20A, 15V
  • Status: Discontinued (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.1685 $62.0220
28+ $4.2409 $118.7452
43+ $4.1083 $176.6569
59+ $3.9759 $234.5781
76+ $3.8433 $292.0908
101+ $3.4458 $348.0258
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Availability: 7,500 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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