This MOSFET transistor is part of the TrenchFET series, designed for use in discrete semiconductor products.

• It is an: N-channel FET type with a drain-to-source voltage of 60 V and a power dissipation of 375 W.
• The maximum gate-source voltage is: ±20 V, and the operating temperature range is between -55°C and 175°C.
• The package/case is a: TO-220-3, and the supplier device package is a TO-220AB.
• The input capacitance is: 11113 pF @ 30 V, and the gate charge is 126 nC @ 10 V.
• The continuous drain current is: 120 A @ 25°C, and the maximum Rds On is 2.3 mOhm @ 30 A and 10 V.
• The maximum gate-source threshold voltage is: 2.5 V @ 250 µA, and the drive voltage is 4.5 V and 10 V @ max Rds On and min Rds On, respectively.