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SUP50N03-5M1P-GE3 Vishay
Same model may have multiple batches, images only for reference.

SUP50N03-5M1P-GE3

Part No SUP50N03-5M1P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-220AB
Datasheet
SUP50N03-5M1P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 2780pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.7W (Ta), 59.5W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104127-SUP50N03-5M1P-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP50N03-5M1P-GE3 CAD Model

Description

The Vishay MOSFET 1104127-SUP50N03-5M1P-GE3 is a N-Channel polarity, through-hole mounting technology, and TO-220AB case/package discrete semiconductor product.

  • Channel Polarity: N-Channel
  • Mounting Technology: Through-Hole
  • Case/Package: TO-220AB
  • Power Dissipation: 2.7W (Ta) and 59.5W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Rds On: 5.1 mOhm @ 22A, 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Gate Charge: 66nC @ 10V
  • Input Capacitance: 2780pF @ 15V
  • Drive Voltage: 4.5V, 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products

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880+ $0.1475 $129.8000
1,365+ $0.1424 $194.3760
1,870+ $0.1384 $258.8080
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3,230+ $0.1203 $388.5690
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