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Same model may have multiple batches, images only for reference.
SUP53P06-20-E3 Real Image
Same model may have multiple batches, images only for reference.

SUP53P06-20-E3

Part No SUP53P06-20-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 9.2A TO220AB
Datasheet
SUP53P06-20-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9.2A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 115nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 104.2W (Tc)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104128-SUP53P06-20-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUP53P06-20-E3 CAD Model

Description

The Vishay 1104128-SUP53P06-20-E3 is a P-Channel MOSFET transistor with a maximum power dissipation of 3.1W (Ta) and 104.2W (Tc).

  • Maximum Power Dissipation: 3.1W (Ta) and 104.2W (Tc)
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 9.2A (Ta) and 53A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 19.5 mOhm @ 30A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6862 $59.0170
85+ $1.3836 $117.6060
130+ $1.3404 $174.2520
180+ $1.2971 $233.4780
235+ $1.2539 $294.6665
310+ $1.1242 $348.5020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,950 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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