Vishay Siliconix SUP60020E-GE3 is an N-channel MOSFET (Metal Oxide) that belongs to the TrenchFET series.

• Product Category: Discrete Semiconductor Products
• Component Type: Transistors - FETs, MOSFETs - Single
• Package: Tube
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Drain-to-Source Voltage (Vdss): 80V
• Continuous Drain Current (Id) @ 25°C: 150A (Tc)
• Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 375W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
• MSL Level: 1
• HTSUS Code: 8541.29.0095
• Base Product Number: SUP60020