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Same model may have multiple batches, images only for reference.
SUP60N02-4M5P-E3 Vishay
Same model may have multiple batches, images only for reference.

SUP60N02-4M5P-E3

Part No SUP60N02-4M5P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A TO220AB
Datasheet
SUP60N02-4M5P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 5950pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104130-SUP60N02-4M5P-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP60N02-4M5P-E3 CAD Model

Description

The Vishay MOSFET is a high-quality electronic component that is designed for use in discrete semiconductor products.

  • Channel Polarity: N-channel
  • Mounting Style: Through-hole
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 60A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 50nC @ 4.5V
  • Input Capacitance: 5950pF @ 10V
  • Rds On: 4.5 mOhm @ 20A, 10V
  • Power Dissipation: 3.75W (Ta), 120W (Tc)
  • Operating Temperature: -55°C to 175°C
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7743 $60.3888
38+ $3.0969 $117.6822
58+ $3.0002 $174.0116
80+ $2.9034 $232.2720
103+ $2.8067 $289.0901
138+ $2.5163 $347.2494
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Availability: 20,000 pieces
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