The SUP60N06-18-E3 is an N-Channel MOSFET manufactured by Vishay Siliconix, designed for high-efficiency switching applications. This MOSFET is characterized by its low on-resistance and fast switching speed, minimizing power losses and enhancing overall system performance. The -E3 suffix indicates that the device is RoHS compliant, meaning it is lead-free and meets environmental standards.

Applications

• Synchronous Rectification in AC-DC and DC-DC converters
• Motor Control
• Power Inverters
• Load Switching
• Battery Management Systems (BMS)

Features

• N-Channel MOSFET
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• RoHS Compliant (-E3 Suffix)

Benefits

• Improved Efficiency: Low on-resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation.
• Faster Operation: Enables operation at higher frequencies, resulting in smaller and more cost-effective power supply designs.
• Enhanced Reliability: Robust design ensures stable performance in demanding conditions.
• Environmentally Friendly: RoHS compliance indicates the device is free of hazardous substances, supporting environmentally conscious designs.

Specifications

The SUP60N06-18-E3 features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 60A. Its typical on-resistance (RDS(on)) is 18 mΩ at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 2-4V. This MOSFET is commonly packaged in a TO-252 (DPAK) package to facilitate effective heat dissipation. It operates within a temperature range of -55°C to +175°C, ensuring reliable performance under various operating conditions. The device is designed for surface mount technology (SMT), allowing for automated assembly and high-density board layouts.